Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
复制标题
选择性区域金属有机气相外延中掩模上多晶生长的决定因素：气相浓度分析
DOI：
10.1143/jjap.42.l359
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发表时间：
2003
影响因子：
1.5
通讯作者：
A. Shimogaki
中科院分区：
文献类型：
--
作者：
H. Oh;M. Sugiyama;Y. Nakano;A. Shimogaki
我们提出了一种在选择性区金属有机气相外延掩膜上生成多晶的机制。当膜前驱体刚好在掩膜上方的气相浓度超过临界值时，就会产生多晶。在总压力为100 mbar时，在2 mm宽的SiO2掩模中心出现了GaAs多晶，但当总压力降至50 mbar时，GaAs多晶消失。观察到的总压力和掩膜宽度对多晶生成的影响与通过数值求解气相扩散方程估计的掩膜上方的膜前驱体浓度一致。
We propose a mechanism for the generation of polycrystals on masks in selective-area metalorganic vapor phase epitaxy. Polycrystals are generated when the gas-phase concentration of a film precursor just above a mask exceeds a critical value. The polycrystals of GaAs were observed at the center of 2-mm-wide SiO2 masks at 100 mbar total pressure, but they disappeared with the reduction of the total pressure to 50 mbar. The observed effect of total pressure and mask width on the generation of polycrystals was consistent with the concentration of a film precursor just above the mask which was estimated by numerically solving the gas-phase diffusion equation.