Impact of process variations on emerging memristor
Impact of process variations on emerging memristor
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DOI：
10.1145/1837274.1837495
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
Dimin Niu;Yiran Chen;Cong Xu;Yuan Xie
中科院分区：
文献类型：
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作者：
Dimin Niu;Yiran Chen;Cong Xu;Yuan Xie
忆阻器被称为第四个基本的双端电路元件，自2008年惠普实验室开发出第一个真正的器件以来，吸引了许多研究兴趣。纳米忆阻器件以其无易失性、非线性、低功耗和良好的可扩展性等特点，具有构建新型计算系统的潜力。记忆电阻器的电学特性主要是由材料特性和制作工艺决定的。例如，工艺变化可能导致记忆电阻器的实际电气行为偏离原始设计，并导致设备故障。因此，了解和表征工艺变化对忆阻器电学行为的影响及其对电路设计的意义是非常重要的。在本文中，我们分析了几何变化对忆阻器电特性的影响。引入两个参数——归一化累计电阻偏差（Normalized cumulative Resistance Deviation）和归一化累计绝对电阻偏差（NAARD）来测量在工艺变化影响下忆阻器整体内部状态（或电阻）的波动。在此基础上，进行了蒙特卡罗模拟，以评估器件失配效应在基于忆阻器的存储器中。
The memristor, known as the fourth basic two-terminal circuit element, has attracted many research interests since the first real device was developed by HP labs in 2008. The nano-scale memristive device has the potential to construct some novel computing systems because of its distinctive characters, such as non-volatility, non-linearity, low-power, and good scalability. These electrical characteristics of memristors are mainly determined by the material characteristic and the fabrication process. For example, process variations may cause the deviation of the actual electrical behavior of memristors from the original design and result in the malfunction of the device. Therefore, it is very important to understand and characterize the impact of process variations on the electrical behaviors of the memristor and its implication to the circuit design. In this paper, we analyze the impact of the geometry variations on the electrical characteristics of the memristor. Two parameters — NARD (Normalized Accumulative Resistance Deviation) and NAARD (Normalized Accumulative Absolute Resistance Deviation), are introduced to measure the fluctuation of the overall internal state (or the resistance) of a memristor under the impact of process variations. Based on our analysis, Monte-Carlo simulations are conducted to evaluate the device mismatch effects in the memristor-based memory.