Digital circuits using self-shunted Nb/NbxSi1-x/Nb Josephson junctions
Digital circuits using self-shunted Nb/NbxSi1-x/Nb Josephson junctions
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DOI：
10.1063/1.3432065
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发表时间：
2010-05
影响因子：
4
通讯作者：
D. Olaya;P. Dresselhaus;S. Benz;A. Herr;Q. Herr;A. Ioannidis;Donald Miller;A. Kleinsasser
中科院分区：
文献类型：
--
作者：
D. Olaya;P. Dresselhaus;S. Benz;A. Herr;Q. Herr;A. Ioannidis;Donald Miller;A. Kleinsasser
基于约瑟夫森结和非晶铌硅（a-NbSi）势垒的超导数字电路已经被设计、制造和测试。单通量量子（SFQ）移位寄存器在±30%的偏置裕度下工作，确认了结的再现性和均匀性。静态数字分压器在单个偏置电流值下工作高达165 GHz，仅比具有4.5 kA/cm2临界电流密度的外部分流alox屏障结制造的电路稍微慢一点。相比之下，自分流的a- nbsi结使电路密度增加了一倍。这和它们相对较厚的10nm势垒可以提高复杂SFQ电路的产量。
Superconducting digital circuits based on Josephson junctions with amorphous niobium-silicon (a-NbSi) barriers have been designed, fabricated, and tested. Single-flux-quantum (SFQ) shift registers operated with ±30% bias margins, confirming junction reproducibility and uniformity. Static digital dividers operated up to 165 GHz for a single value of bias current, which was only marginally slower than circuits fabricated with externally shunted AlOx-barrier junctions having a comparable critical current density of 4.5 kA/cm2. In comparison, self-shunted a-NbSi junctions enabled a doubling in circuit density. This and their relatively thick 10 nm barriers could increase the yield of complex SFQ circuits.