p-type conduction in codoped ZnO thin films
p-type conduction in codoped ZnO thin films
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DOI：
10.1063/1.1527210
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发表时间：
2003
影响因子：
3.2
通讯作者：
A. Singh;R. M. Mehra;A. Wakahara;A. Yoshida
中科院分区：
文献类型：
--
作者：
A. Singh;R. M. Mehra;A. Wakahara;A. Yoshida
通过共掺杂的方法实现了ZnO薄膜的p型导电。共掺杂ZnO薄膜中的导电类型和载流子密度被发现依赖于溅射气体混合物中的氧分压比。在氧分压比为60%的条件下沉积的薄膜的最低室温电阻率为11.77 Ω cm，空穴密度为9.0×1016 cm-3。共掺杂的薄膜被发现是c-取向和高度透明的。
p-type conduction in ZnO thin films was realized by the codoping method. Types of conduction and carrier density in codoped ZnO films were found to be dependent on the oxygen partial pressure ratios in the sputtering gas mixture. The lowest room temperature resistivity was found to be 11.77 Ω cm with a hole density of 9.0×1016 cm−3 for the films deposited in 60% of oxygen partial pressure ratio. Codoped films were found to be c-oriented and highly transparent.