Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET
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接触和沟道电阻对伪 MOSFET 频率相关电容和电导的影响

DOI:
10.1016/j.sse.2019.03.059
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发表时间:
2019
影响因子:
1.7
通讯作者:
S. Cristoloveanu
S. Cristoloveanu
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Shingo Sato;G. Ghibaudo;L. Benea;I. Ionica;Y. Omura;S. Cristoloveanu

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