Conditions and possible mechanism of condensation of e–h pairs in bulk GaAs at room temperature
Conditions and possible mechanism of condensation of e–h pairs in bulk GaAs at room temperature
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室温块状 GaAs 中 e-h 对凝聚的条件和可能机制
DOI：
10.1002/pssb.200301989
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
P. Vasil’ev
中科院分区：
文献类型：
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作者：
P. Vasil’ev
本文提出了一种先前已观察到的室温下GaAs体材料中电子-质子对的凝聚机制。关键是光子辅助的配对发生在电子和空穴的系统中，它们占据了能带底部的能级。由于非常高的e-h密度，对的破坏和相干性的损失不会发生，因为从导带底部开始的30-60 meV带内的几乎所有能级都被占据。结果，出现了具有最小可能能量的复合玻色子（成对的电子和空穴）的相干系综。这种强非平衡相干e-h BCS-like态的寿命短至几百飞秒。（© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
A mechanism of the condensation of e–h pairs in bulk GaAs at room temperature, which has been observed earlier, is proposed. The point is that the photon assisted pairing happens in a system of electrons and holes that occupy energy levels at the very bottoms of the bands. Due to a very high e–h density, the destruction of the pairs and loss of coherence does not occur because almost all energy levels inside a 30–60 meV band from the bottom of the conduction band prove to be occupied. As a result, a coherent ensemble of composite bosons (paired electrons and holes) with the minimum possible energy appears. The lifetime of this strongly non‐equilibrium coherent e–h BCS‐like state is as short as a few hundred of femtoseconds. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)