Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells
Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells
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DOI：
10.1103/physrevb.81.201301
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发表时间：
2010-02
影响因子：
3.7
通讯作者：
Ivan Knez;R. Du;G. Sullivan
中科院分区：
文献类型：
--
作者：
Ivan Knez;R. Du;G. Sullivan
我们在实验上研究了InAs/GaSb量子阱霍尔栅器件的低温电导率。使用一对静电门，我们能够将费米能级移动到电子-空穴杂化状态，并观察到一个微小的间隙。差距中的电导率的温度依赖性显示出残余电导率，这可以通过在杂质散射的存在下来自自由载流子以及杂化载流子的贡献来一致地解释，如Naveh和Laikhtman [Euro.物理信函：55，545-551（2001）]。实验的稳定性建议的螺旋边缘状态的影响将被讨论。
We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the electron-hole hybridization state, and observe a mini gap. Temperature dependence of the conductivity in the gap shows residual conductivity, which can be consistently explained by the contributions from the free as well as the hybridized carriers in the presence of impurity scattering, as proposed by Naveh and Laikhtman [Euro. Phys. Lett., 55, 545-551 (2001)]. Experimental implications for the stability of proposed helical edge states will be discussed.