Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si.
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si.
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DOI：
10.1364/ol.44.004566
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发表时间：
2019-09
期刊：
影响因子：
3.6
通讯作者：
Si Zhu;Bei Shi;K. Lau
中科院分区：
文献类型：
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作者：
Si Zhu;Bei Shi;K. Lau
从技术经济角度来看，硅上直接生长的量子点（QD）激光器对于光子电路的单片集成很有吸引力。在这封信中，我们报告了这些采用高质量回音壁模式微谐振器的硅基激光器的小型化。基于先前在互补金属氧化物半导体标准（001）Si平台上开发的InAs/InAlGaAs QD和优化的器件实现技术，首次成功实现了Si上片上电泵浦InP基QD微环激光器（MRL）。针对 50 μm 直径的 MRL，测量阈值为 50 mA 的 1.5 μm 波长带的室温脉冲激光。激光发射温度高达 70°C，特征温度为 51.5 K。
Directly grown quantum dot (QD) lasers on silicon are appealing for monolithic integration of photonic circuits from a technoeconomic perspective. In this Letter, we report miniaturization of these Si-based lasers employing high-quality whispering-gallery mode microresonators. Based on previously developed InAs/InAlGaAs QDs on the complementary metal-oxide-semiconductor-standard (001) Si platform and optimized device implementation techniques, on-chip electrically pumped InP-based QD microring lasers (MRLs) on Si are successfully realized for the first time. Room-temperature pulsed lasing in the 1.5 μm wavelength band, with a threshold of 50 mA, is measured for 50-μm-diameter MRLs. Lasing up to 70°C is achieved with a characteristic temperature of 51.5 K.