Impurity photovoltaic effect in indium-doped silicon solar cells
Impurity photovoltaic effect in indium-doped silicon solar cells
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DOI：
10.1063/1.1354651
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发表时间：
2001-03
影响因子：
3.2
通讯作者：
S. Karazhanov
中科院分区：
文献类型：
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作者：
S. Karazhanov
研究了基层中掺杂n型和p型掺杂剂的两组掺杂铟单晶硅太阳能电池的杂质光伏效应。利用电荷中性条件对少数载流子的连续性方程进行了数值求解，得到了电流-电压特性。结果表明，对于所考虑的两组电池来说，由于载流子光产生从深缺陷水平引起的短路电流的改善是可以忽略不计的。随着陷阱浓度的增加，短路电流增加，当陷阱浓度接近n型掺杂补偿时，开路电压突然降低。然而，这些依赖关系是由于寿命的增加，总平衡载流子密度的降低而发生的，并且即使在没有吸收子隙光子的情况下也会发生。结果表明，由于杂质光伏效应，铟不是提高硅太阳能电池效率的合适杂质。
Impurity photovoltaic effect is investigated in two groups of indium-doped single-crystalline silicon solar cells with n-type and p-type dopants in the base layer. The continuity equation for minority carriers is solved numerically using the charge neutrality condition and current–voltage characteristics are found. It is shown that the improvement of short-circuit current due to carrier photogeneration from the deep defect level is negligible for both groups of the cells considered. Short-circuit current increases with increasing the trap concentration and open-circuit voltage abruptly decreases for trap concentrations close to compensation by n-type dopant. However, these dependencies occur due to the increase of lifetime, the decrease of the total equilibrium carrier density, and take place even in the absence of the absorption of subgap photons. It is shown that indium is not the proper impurity for efficiency improvements of silicon solar cells due to the impurity photovoltaic effect.