Graphene field-effect devices
Graphene field-effect devices
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DOI：
10.1140/epjst/e2007-00222-8
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发表时间：
2007-09-01
影响因子：
2.8
通讯作者：
Kurz, H.
中科院分区：
文献类型：
--
作者：
Echtermeyer, T. J.;Lemme, M. C.;Kurz, H.
在这篇文章中，石墨烯的电子性质进行了研究，当引入场效应器件（FED）。除了手动石墨烯沉积之外，还应用传统的自上而下的CMOS兼容工艺。通过扫描电子显微镜、原子力显微镜和拉曼光谱对少量单层石墨烯片进行了表征。研究了单层石墨烯夹在两层二氧化硅薄膜之间的电学性质。将石墨烯伪MOS结构中的载流子迁移率与从双栅石墨烯场效应晶体管和硅金属氧化物半导体场效应晶体管（MOSFET）获得的载流子迁移率进行比较。
In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices ( FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors ( MOSFETs).