Double photoionization into double core-hole states in Xe
Double photoionization into double core-hole states in Xe
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DOI：
10.1103/physrevlett.98.183002
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发表时间：
2007-05-04
影响因子：
8.6
通讯作者：
Ito, K.
中科院分区：
文献类型：
--
作者：
Hikosaka, Y.;Lablanquie, P.;Ito, K.
用磁瓶飞行时间谱仪研究了Xe ~（2+）4d（-2）的双光电离（DPI）过程中产生的双芯-空穴态。通过从包含两个光电子和两个俄歇电子的四重符合中提取的俄歇谱线，确认了Xe ~（2+）4d（-2）态的归属。据估计，在301.6eV的光子能量下，芯-芯DPI进入Xe 2 + 4d（-2）具有约0.3MB的有利截面。强烈的芯-芯DPI是由于4d（-2）连续谱与4p单光电离的混合，这表现在Xe 2 + 4d（-2）分量的相对强度中。
Double photoionization (DPI) leading to double core-hole states of Xe2+ 4d(-2) has been studied using a magnetic bottle time-of-flight spectrometer. The assignments of the Xe2+ 4d(-2) states are confirmed by the Auger lines extracted from fourfold coincidences including two photoelectrons and two Auger electrons. It is estimated that the core-core DPI into Xe2+ 4d(-2) at a photon energy of 301.6 eV has a favored cross section of about 0.3 MB. The intense core-core DPI is due to mixing of the 4d(-2) continuum with the 4p single photoionization, which is manifested in the relative intensities of the Xe2+ 4d(-2) components.