Van der Waals integration of silicene and hexagonal boron nitride
Van der Waals integration of silicene and hexagonal boron nitride
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DOI：
10.1088/2053-1583/ab0a29
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发表时间：
2019-04
期刊：
影响因子：
5.5
通讯作者：
F. B. Wiggers;A. Fleurence;K. Aoyagi;T. Yonezawa;Y. Yamada-Takamura;Haifeng Feng;J. Zhuang;Yi Du-;A. Kovalgin;M. D. Jong
中科院分区：
文献类型：
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作者：
F. B. Wiggers;A. Fleurence;K. Aoyagi;T. Yonezawa;Y. Yamada-Takamura;Haifeng Feng;J. Zhuang;Yi Du-;A. Kovalgin;M. D. Jong
硅烯是石墨烯的硅类似物，由硅原子的原子弯曲蜂窝晶格组成。理论预测了特殊的电子特性，包括狄拉克费米子和拓扑自旋霍尔绝缘体相。阻碍在电子器件中探索此类特性的一个重要障碍是硅烯的化学敏感性，这阻碍了其在层堆叠中的结合。在这里，我们通过实验证明，外延硅烯和六方氮化硼（h-BN）可以堆叠，而不会干扰硅烯的电子特性。通过在室温下沉积 Si 原子获得 ZrB2(0 0 0 1) 衬底薄膜上外延 h-BN 下方的插层硅烯。使用（角分辨）光电子能谱（ARPES、PES）和扫描隧道显微镜（STM），我们发现插层硅烯表现出与ZrB2上外延硅烯相同的电子特性，同时它在空气中可以抵抗氧化长达数小时。这是开发允许制造器件的层堆叠的重要一步。
Silicene, the silicon analogue of graphene, consists of an atomically buckled honeycomb lattice of silicon atoms. Theory predicts exceptional electronic properties, including Dirac fermions and a topological spin Hall insulator phase. An important obstacle impeding exploration of such properties in electronic devices is the chemical sensitivity of silicene, hampering its incorporation in layer stacks. Here we show experimentally that epitaxial silicene and hexagonal boron nitride (h-BN) can be stacked without perturbing the electronic properties of silicene. Intercalated silicene underneath epitaxial h-BN on ZrB2(0 0 0 1) substrate films is obtained by depositing Si atoms at room temperature. Using (angle resolved) photoelectron spectroscopy (ARPES, PES) and scanning tunneling microscopy (STM) we find that the intercalated silicene exhibits the same electronic properties as epitaxial silicene on ZrB2, while it resists oxidation in air up to several hours. This is an essential step towards the development of layer stacks that allow for fabrication of devices.