Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
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DOI：
10.1063/1.2364603
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发表时间：
2006-11
影响因子：
3.2
通讯作者：
P. Paiano;P. Prete;N. Lovergine;A. Mancini
中科院分区：
文献类型：
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作者：
P. Paiano;P. Prete;N. Lovergine;A. Mancini
本文报道了在375 ~ 500°C温度范围内，利用叔丁基胂和三甲基镓在H2中，通过金属有机气相外延法在（1 B）GaAs上自组装Au催化的GaAs纳米线。纳米线是[1]B排列的并且无扭结。在425°C以下，纳米线具有窄的基部直径分布，紧密匹配Au纳米颗粒在其尖端的尺寸（约60 nm）（无锥形）。在425°C以上，纳米线显示出基于六边形的金字塔形状，其底部边缘垂直于面内衬底方向，并且底部直径随温度呈指数增加，表明沿纳米线侧壁沿着的动力学受限生长。沿沿着和[1 1]B方向生长的激活能在20- 23千卡·斯坎摩尔范围内。
Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy is reported between 375 and 500°C, using tertiarybutylarsine and trimethylgallium in H2. The nanowires are [1¯1¯1¯]B aligned and kink-free. Below 425°C the nanowires have narrow base diameter distributions, closely matching the size (∼60nm) of the Au nanoparticles at their tip (no tapering). Above 425°C the nanowires show a hexagonal-based pyramidal shape with base edges normal to the ⟨2¯11⟩ in-plane substrate directions and base diameters which increase exponentially with temperature, indicating a kinetics limited growth along the nanowire sidewalls. Activation energies in the range of ∼20–23kcal∕mol were estimated for growth along both the sidewalls and the [1¯1¯1¯]B direction.