Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces
Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces
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栅极金属化工艺对高k/In0.53Ga0.47As界面电特性的影响
DOI：
10.1116/1.3610989
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M. Rodwell
中科院分区：
文献类型：
--
作者：
G. Burek;Y. Hwang;A. Carter;V. Chobpattana;J. Law;W. Mitchell;B. Thibeault;S. Stemmer;M. Rodwell
研究了不同栅金属沉积工艺对介质/III-V族界面电特性的影响。Al 2 O3和HfO 2晶体生长在In0.53Ga0.47As沟道上，顶部金属电极通过热蒸发或电子束沉积来沉积。结果表明，金属氧化物半导体电容器与电子束蒸发电极表现出显着更大的midgap界面陷阱密度比那些与热蒸发电极。由电子束金属化引起的损伤可以通过随后在合成气体中长时间退火来减轻。
The influence of different gate metal deposition processes on the electrical characteristics of dielectric/III-V interfaces is investigated. Al2O3 and HfO2 dielectrics are grown on In0.53Ga0.47As channels and top metal electrodes are deposited by either thermal evaporation or electron beam deposition. It is shown that metal-oxide-semiconductor capacitors with electron beam evaporated electrodes exhibit substantially larger midgap interface trap densities than those with thermally evaporated electrodes. The damage caused by electron beam metallization can be mitigated by subsequent, long anneals in forming gas.