Boosting thermoelectric performance of n-type PbS through synergistically integrating In resonant level and Cu dynamic doping
Boosting thermoelectric performance of n-type PbS through synergistically integrating In resonant level and Cu dynamic doping
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DOI：
10.1016/j.jpcs.2020.109640
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发表时间：
2021-01
影响因子：
4
通讯作者：
Zhenghao Hou;Dongyang Wang;Tao Hong;Yongxin Qin;S. Peng;Guangtao Wang;Jinfeng Wang;Xiang Gao;Zhiwei Huang;Li-dong Zhao
中科院分区：
文献类型：
--
作者：
Zhenghao Hou;Dongyang Wang;Tao Hong;Yongxin Qin;S. Peng;Guangtao Wang;Jinfeng Wang;Xiang Gao;Zhiwei Huang;Li-dong Zhao
PbS作为一种在中温范围内具有很大发展空间的优良热电材料，引起了人们的广泛关注。在本研究中，通过共振能级和Cu动态掺杂的协同作用，提高了n型PbS的热电性能。首先，In掺杂通过最佳载流子浓度和共振能级效应有效地改善了n型PbS的电输运性能，同时通过杂质原子散射增强了声子散射，降低了晶格热导率。其次，Cu动态掺杂进一步提高了Pb0.995In0.005S+3%Cu在423 K- 823 K的平均功率因数至约18.8 μW cm− 1 K − 2，这是由于更高的Seebeck系数和在大温度范围内抑制电子热输运。结果表明，Pb0.995In0.005S+3%Cu的热电优值（ZT）在723 K时最高，约为1.1; Pb0.995In0.005S+3%Cu的热电优值（ZTave）在423 K ~ 823 K时最高，约为0.8，这对实现热电技术具有重要意义。
PbS has attracted much attention as an excellent thermoelectric material with high development space at middle temperature scope. The thermoelectric performance forn-type PbS was boosted by the cooperative effects of resonance level and Cu dynamic doping in our research. In the first place, In doping improved the electrical transport performance ofn-type PbS effectively on account of optimal carrier concentration and resonant level effects, and reduced the lattice thermal conductivity by reason of heightened phonon scattering through impurity atoms scattering simultaneously. Secondly, Cu dynamic doping further increased average power factor to ~18.8 μW cm−1K−2at 423 K- 823 K of Pb0.995In0.005S+3%Cu owing to higher Seebeck coefficients and suppressed electronic thermal transports at vast temperature span. In result, the best thermoelectric figure of merit (ZT) of Pb0.995In0.005S+3%Cu at 723 K reached ~1.1 and a record large averageZT(ZTave) of Pb0.995In0.005S+3%Cu was achieved ~ 0.8 at 423 K-823 K, which is vital in the implementation of thermoelectric technology.