XeF2 gas-assisted focused-electron-beam-induced etching of GaAs with 30 nm resolution
XeF2 gas-assisted focused-electron-beam-induced etching of GaAs with 30 nm resolution
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DOI：
10.1088/0957-4484/22/4/045301
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发表时间：
2011-01-28
期刊：
影响因子：
3.5
通讯作者：
Lorke, A.
中科院分区：
文献类型：
--
作者：
Ganczarczyk, A.;Geller, M.;Lorke, A.
我们在室温下实现了气体辅助聚焦电子束(FEB)诱导刻蚀，刻蚀的分辨率为30 nm。我们在双束聚焦离子束中使用扫描电子显微镜(SEM)和可以通过针直接注入到样品表面的二氟化氙气(XeF2)。结果表明，以XeF2为先驱体的FeB诱导刻蚀得到了各向同性的光滑刻蚀，而刻蚀速率强烈依赖于束流和电子能量。样品表面的天然氧化物抑制了刻蚀过程；因此，去除氧化物结合表面化学钝化是必要的，以实现这种高分辨率的GaAs刻蚀替代方案。
We demonstrate the gas-assisted focused-electron-beam (FEB)-induced etching of GaAs with a resolution of 30 nm at room temperature. We use a scanning electron microscope (SEM) in a dual beam focused ion beam together with xenon difluoride (XeF2) that can be injected by a needle directly onto the sample surface. We show that the FEB-induced etching with XeF2 as a precursor gas results in isotropic and smooth etching of GaAs, while the etch rate depends strongly on the beam current and the electron energy. The natural oxide of GaAs at the sample surface inhibits the etching process; hence, oxide removal in combination with chemical surface passivation is necessary as a strategy to enable this high-resolution etching alternative for GaAs.