XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation
XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation
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DOI：
10.1016/j.tsf.2005.04.014
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发表时间：
2005-10-21
期刊：
影响因子：
2.1
通讯作者：
Szuber, J
中科院分区：
文献类型：
--
作者：
Kwoka, M;Ottaviano, L;Szuber, J
本文介绍了XPS研究Si（100）上L-CVD SnO 2薄膜后续附加氧化前后的表面化学的结果。此外，还研究了老化效应，以检查环境氧化的影响。沉积态的L-CVD SnO_2薄膜表现出明显的非化学计量比，[O]/[Sn]的相对浓度为1.29 ± 0.1。在高温（800 K）下原位氧化后，相对浓度[O]/[Sn]增加到1.95 +/- 0.05，其对应于几乎化学计量的SnO 2。在长期暴露于空气中后，L-CVD SnO_2薄膜的[O]/[Sn]相对浓度几乎相同。两种情况下的L-CVD SnO 2薄膜的氧化态通过使用分解程序的相应XPS 0 Is和Sn（3）d（5/2）峰的形状分析来确认。对于沉积的L-CVD SnO_2薄膜的SnO和SnO_2的混合物进行了观察，而对于氧化的L-CVD SnO_2薄膜的SnO_2的支配被确定。(c)2005 Elsevier B. V.保留所有权利。
In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1.29 +/- 0.1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1.95 +/- 0.05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS 0 Is and Sn(3)d(5/2) peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined. (c) 2005 Elsevier B.V. All rights reserved.