Effect of (LiCe) doping in (NaBi)0.48[ ]0.04Bi2Nb1.97W0.03O9 high-temperature ceramics
Effect of (LiCe) doping in (NaBi)0.48[ ]0.04Bi2Nb1.97W0.03O9 high-temperature ceramics
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DOI：
10.1016/j.jallcom.2014.11.107
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发表时间：
2015-03
影响因子：
6.2
通讯作者：
Lingguang Sun;Qiang Chen;Di Wu;Jiagang Wu;Zhi Tan;D. Xiao;Jianguo Zhu
中科院分区：
文献类型：
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作者：
Lingguang Sun;Qiang Chen;Di Wu;Jiagang Wu;Zhi Tan;D. Xiao;Jianguo Zhu
采用常规固相烧结方法制备了(LiCe)改性(NaBi)0.48[ ]0.04Bi2Nb1.97W0.03O9陶瓷，并研究了掺杂对其电性能的影响。该材料体系中致密的微观结构非常发达，具有较高的相对密度ρrd（>98.12%），呈现出典型的Aurivilius相结构。随着(LiCe)含量的增加，居里温度(TC)从766°C逐渐增加到776°C，而且(LiCe)的添加显着增加了压电常数(d33)。 (NaBi)0.43(LiCe)0.05[]0.04Bi2Nb1.97W0.03O9陶瓷表现出最佳的电性能（例如，d33∼26.1pC/N、kp∼10.5%和Qm∼3209），以及相对较高的TC（∼771℃）和良好的热稳定性，直至750℃。这些结果表明这种陶瓷是高温压电应用的有前途的候选者。
(LiCe)-modified (NaBi)0.48[ ]0.04Bi2Nb1.97W0.03O9ceramics were prepared by conventional solid state sintering method, and the effect of doping on the electrical properties was studied. The dense microstructure with a high relative densityρrd(>98.12%) was well developed in this material system, presenting a typical Aurivillius phase structure. The Curie temperature (TC) gradually increases from 766 °C to 776 °C with increasing (LiCe) content, and moreover the addition of (LiCe) significantly increases the piezoelectric constant (d33). The (NaBi)0.43(LiCe)0.05[ ]0.04Bi2Nb1.97W0.03O9ceramics exhibit optimum electrical properties (e.g.,d33∼ 26.1 pC/N,kp∼ 10.5%, andQm∼ 3209), together with a relatively highTC(∼771 °C) and good thermal stability until 750 °C. These results indicate that this ceramic is a promising candidate for high-temperature piezoelectric applications.