Radiation Effects in Optical Link Components for Future Particle Physics Detectors
Radiation Effects in Optical Link Components for Future Particle Physics Detectors
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DOI：
10.25560/12870
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发表时间：
2013-04
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影响因子：
--
通讯作者：
P. Stejskal
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文献类型：
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作者：
P. Stejskal
在未来的粒子物理实验中使用的光学链路组件通常在实验的生命周期内暴露在强辐射场中，因此需要对这些组件进行辐射耐受性方面的鉴定。给出了2009年和2010年在10 GB/S数据链路上使用的半导体激光器和光电二极管的数据，这些数据是在高通量(超过1015粒子/厘米~2)的中子和介子辐照下测试的，并附有退火热数据。为了预测在粒子物理实验中不同位置的不同粒子通量照射的激光的行为，对激光中的辐射损伤进行了模拟。E模型描述了半导体激光器的L特性在考虑退火过程的辐照下的退化过程。用实验数据验证了模型的稳健性。此外，还给出了用GEANT4估算光电探测器单粒子翻转的方法。还讨论了光电器件在HEP探测器数字数据传输系统中的应用。
Optical link components used in future particle physics experiments will typically be exposed to intense radiation fields during the lifetime of the experiment and the qualification of these components in terms of radiation tolerance is thus required. Data on semiconductor lasers and photodiodes for use in 10 Gb/s datalinks tested during high-fluence (in excess of 1015 particles/cm2) neutron and pion irradiation in 2009 and 2010 are presented with annealing data. In order to predict the behaviour of a laser irradiated with the different particle fluxes at different locations inside a particle physics experiment, radiation damage in lasers has been modelled. e model describes the degradation of the L-I aracteristic of a semiconductor laser undergoing irradiation with the annealing processes taken into account. e robustness of the model has been e ed against the experimental data. Additionally, the author’s method to estimate Single Event Upsets in photodetectors using GEANT4 is presented. Use of optoelectronic devices in digital data transmission systems in HEP detectors is also discussed.