Molecular beam epitaxy growth of boron-containing nitrides
Molecular beam epitaxy growth of boron-containing nitrides
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DOI：
10.1116/1.590731
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发表时间：
1999-05-01
影响因子：
1.4
通讯作者：
Wicks, GW
中科院分区：
文献类型：
--
作者：
Gupta, VK;Wamsley, CC;Wicks, GW
用氨气分子束外延技术在(0001)蓝宝石衬底上生长了BN、BGaN和BAlN层。通过反射高能电子衍射、X射线衍射、傅里叶变换红外反射光谱和光致发光光谱对薄膜的晶体结构和材料质量进行了表征。这些测量表明，BN层以多晶薄膜的形式生长，而BGaN和BAlN层以单晶的形式生长，硼含量分别高达2%和6%。在BGaN样品中，随着硼含量的增加，禁带宽度单调增加，c晶格常数减小。在硼含量较高的样品中也观察到黄带发射和表面粗糙度增加。(C)1999年美国真空协会。[S0734-211X(99)02703-1]。
Layers of BN, BGaN and BAlN were grown by molecular beam epitaxy using ammonia on (0001) sapphire substrates. The crystal structure and material quality of these layers were assessed by reflection high energy electron diffraction, x-ray diffraction, Fourier transform infrared reflectance, and photoluminescence spectroscopy. These measurements reveal that while BN layers grow as polycrystalline films, BGaN and BAlN layers grow as single crystals with boron composition up to 2% and 6%, respectively. A monotonic increase in the band gap energy and a decrease in c-lattice constant were observed with increasing boron concentrations in BGaN samples. Yellow-band emission and increased surface roughening were also observed in samples with higher boron compositions. (C) 1999 American Vacuum Society. [S0734-211X(99)02703-1].