Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body
Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body
复制标题
超窄体全栅 Si-FinFET 中的随机电报信号噪声
DOI：
10.1109/led.2006.880640
复制
发表时间：
2006
影响因子：
4.9
通讯作者：
D. Kwong
中科院分区：
文献类型：
--
作者：
Y.F. Lim;Y. Xiong;N. Singh;R. Yang;Y. Jiang;D. Chan;W. Loh;L. Bera;G. Lo;N. Balasubramanian;D. Kwong
首次研究了栅绕p型SiFinFET中的随机电报信号(RTS)及其相应的闪烁噪声(1/f)。对于栅宽~100 nm(鳍高)、长度~200 nm的器件，典型的RTS捕获/发射时间常数为~0.1-1ms。观察到非常大的RTS幅度(DeltaID/ID高达25%)，这是由于FinFET极端的器件缩放和/或接口质量造成的。估算的散射系数(α~10~(-12)~10~(-13))高于MOSFET的标准值。这些发现证明了RTS与FinFET操作的相关性
For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ~ 100 nm (fin height) and length of ~ 200 nm, the typical RTS capture/emission time constants were ~ 0.1-1 ms. Very large RTS amplitudes (DeltaId/Id up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (alpha~10-12-10-13 ) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation