Inclination of a threading dislocation in an epilayer of 4H-SiC
Inclination of a threading dislocation in an epilayer of 4H-SiC
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DOI：
10.7567/jjap.53.111302
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发表时间：
2014-11-01
影响因子：
1.5
通讯作者：
Onda, Shoichi
中科院分区：
文献类型：
--
作者：
Saka, Hiroyasu;Watanabe, Hiroki;Onda, Shoichi
采用步进控制技术制备的4 H-SiC外延层中，存在着偏离[0001] c轴的穿线位错（TD）。在位错各向同性弹性理论的框架内讨论了这种倾向的原因。计算了外延层中TD的弹性应变能随其取向的变化，并利用最小能量取向来预测倾斜角。计算结果如下。对于4度的截止角（α），螺刃位错（TED）和螺纯螺位错（TpSD）分别从c轴倾斜12度和2度：螺近螺位错（TnSD）和螺混合位错（TMD）从c轴倾斜8度至15度的角度，这取决于它们的实际伯格斯矢量。类似地，对于8度的α，TED和TpSD分别从c轴倾斜21度和4度：TnSD和TMD从c轴倾斜范围从7度到17度的角度。这些预测与实验符合得很好。(C)2014日本应用物理学会
Threading dislocations (TDs) are inclined from the [0001] c-axis in 4H-SiC epilayers which are produced by the step-controlled technique. The reason for this inclination is discussed in the framework of isotropic elastic theory of dislocation. The elastic strain energy of a TD in an epilayer is calculated as a function of its orientation, and the minimum energy orientation is used to predict the inclination angle. The results of the calculations are as follows. For a cut-off angle (alpha) of 4 degrees, a threading edge dislocation (TED) and a threading pure screw dislocation (TpSD) are inclined from the c-axis by 12 and 2 degrees, respectively: Threading near screw dislocations (TnSDs) and threading mixed dislocations (TMDs) are inclined by angles ranging from 8 to 15 degrees from the c-axis, depending on their actual Burgers vectors. Similarly for a of 8 degrees, a TED and a TpSD are inclined from the c-axis by 21 and 4 degrees, respectively: TnSDs and TMDs are inclined from the c-axis by angles ranging from 7 to 17 degrees. These predictions are in good agreement with experiment. (C) 2014 The Japan Society of Applied Physics