Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7−x
Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7−x
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DOI：
10.1063/1.359734
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发表时间：
1995-10
影响因子：
3.2
通讯作者：
C. Copetti;J. Schubert;A. Klushin;S. Bauer;W. Zander;C. Buchal;J. Seo;F. Sánchez;M. Bauer
中科院分区：
文献类型：
--
作者：
C. Copetti;J. Schubert;A. Klushin;S. Bauer;W. Zander;C. Buchal;J. Seo;F. Sánchez;M. Bauer
We communicate a detailed study of the epitaxial growth of CeOz on MgO. The key feature of the growth is the dependence of the in-plane orientation of the Ce02 epitaxial layer on the MgO surface morphology. Atomic force microscopic (APM) measurements, x-ray analyses, as well as high-resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube-on-cube growth of Ce02 on MgO occurs while on smooth substrates the CeO, unit cell is rotated around the surface normal by 45” with respect to the MgO unit cell when the deposition rate is low (-0.3 A/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45” grain boundaries in the CeO, layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45” grain boundaries may be used to fabricate YBazCus07-, Josephson junctions. 0 1995 American Institute of Physics.
