Temperature Tunable Self‐Doping in Stable Diradicaloid Thin‐Film Devices
Temperature Tunable Self‐Doping in Stable Diradicaloid Thin‐Film Devices
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DOI：
10.1002/adma.201502404
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发表时间：
2015-12
影响因子：
29.4
通讯作者：
Y. Zhang;Y. Zheng;Huiqiong Zhou;M. Miao;F. Wudl;Thuc‐Quyen Nguyen
中科院分区：
文献类型：
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作者：
Y. Zhang;Y. Zheng;Huiqiong Zhou;M. Miao;F. Wudl;Thuc‐Quyen Nguyen
具有稳定的闭壳和开壳共存形式的FDT和FDT- br双根碱在固态电子器件中表现出温度可调和可逆的非常规自掺杂行为。增加的T加强了掺杂，导致晶体管中没有关闭状态（I(off)）。
FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I(off)) in the transistors.