Enhanced green photoluminescence from ZnO films prepared by TFA-MOD method
Enhanced green photoluminescence from ZnO films prepared by TFA-MOD method
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DOI：
10.1016/j.matlet.2005.05.015
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发表时间：
2005-10
影响因子：
3
通讯作者：
Y. Zou;Yuxia Wang;Zhengwang Chen;Jianwen Wang;Y. Li
中科院分区：
文献类型：
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作者：
Y. Zou;Yuxia Wang;Zhengwang Chen;Jianwen Wang;Y. Li
采用三氟乙酸金属有机沉积（TFA-MOD）方法在较低温度下在 Si（111）衬底上制备了择优（002）取向 ZnO 薄膜。通过热重分析、傅里叶变换红外吸收、X射线衍射、X射线光电子能谱和光致发光研究了其生长过程、结构和光致发光性能。 900℃退火后形成硅酸锌，绿色光致发光显着增强，肉眼可见。此外，退火环境的氧分压也明显影响绿光发光。我们的结果支持ZnO中的氧反位缺陷是导致绿光发射的原因，并且少量的Zn2SiO4可以增强绿光发射。
Preferentially (002) oriented ZnO films were prepared on Si (111) substrates at relatively low temperature by trifluoroacetate metalorganic deposition (TFA-MOD) method. The growth process, structure and photoluminescence properties were studied by thermogravimetric analysis, Fourier transform infrared absorption, X-ray diffraction, X-ray photoelectron spectra and photoluminescence. The green photoluminescence is enhanced remarkably and becomes visible by naked eyes with the formation of zinc silicate after 900 °C annealing. Furthermore, the oxygen partial pressure of annealing ambient also affects the green photoluminescence evidently. Our results support that oxygen antisite defect in ZnO is responsible for the green emission and a small amount of Zn2SiO4can enhance the green emission.