Doping-free complementary WSe2 circuit via van der Waals metal integration
Doping-free complementary WSe2 circuit via van der Waals metal integration
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通过范德华金属集成的无掺杂互补 WSe2 电路
DOI：
10.1038/s41467-020-15776-x
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发表时间：
2020-04-20
影响因子：
16.6
通讯作者：
Liu, Yuan
中科院分区：
文献类型：
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作者：
Kong, Lingan;Zhang, Xiaodong;Liu, Yuan
二维（2D）半导体由于超薄体晶体管的发展而备受关注。然而，二维晶体管的极性控制和互补逻辑功能的实现仍然是关键的挑战。在这里，我们报告了一种无掺杂策略来调制WSe2晶体管的极性，使用相同的接触金属但不同的集成方法。通过应用Au电极的低能范德华积分，我们观察到稳健和优化的p型晶体管行为，这与使用具有明显n型特征的传统沉积Au触点在相同的WSe2薄片上制造的晶体管形成鲜明对比。由于能够切换大多数载流子类型，并实现电子和空穴的优化接触，在5.5V的偏置电压下，证明了无掺杂逻辑逆变器具有更高的电压增益340。此外，简单的极性控制策略扩展到实现更复杂的逻辑功能，如NAND和NOR。阻碍二维晶体管极性控制的挑战之一是与传统离子注入掺杂方法的不兼容性。在这里，作者报告了一种无掺杂策略，使用不同集成方法的相同金属触点来获得WSe2晶体管的极性控制。
Two-dimensional (2D) semiconductors have attracted considerable attention for the development of ultra-thin body transistors. However, the polarity control of 2D transistors and the achievement of complementary logic functions remain critical challenges. Here, we report a doping-free strategy to modulate the polarity of WSe2 transistors using same contact metal but different integration methods. By applying low-energy van der Waals integration of Au electrodes, we observed robust and optimized p-type transistor behavior, which is in great contrast to the transistors fabricated on the same WSe2 flake using conventional deposited Au contacts with pronounced n-type characteristics. With the ability to switch majority carrier type and to achieve optimized contact for both electrons and holes, a doping-free logic inverter is demonstrated with higher voltage gain of 340, at the bias voltage of 5.5V. Furthermore, the simple polarity control strategy is extended for realizing more complex logic functions such as NAND and NOR. One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using same-metal contacts with different integration methods.