Photocatalysis-induced selective decoration of semiconducting single walled carbon nanotubes: hole-doping effect.
Photocatalysis-induced selective decoration of semiconducting single walled carbon nanotubes: hole-doping effect.
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DOI：
10.1039/c0cc01876g
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发表时间：
2010-09
影响因子：
4.9
通讯作者：
S. Kubota;Daisuke Shimamoto;Jin Sung Park;Hiromasa Nishikiori;Nobuaki Tanaka;Y. Kim;T. Fujii;M. Endo;M. S. Dresselhaus
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文献类型：
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作者：
S. Kubota;Daisuke Shimamoto;Jin Sung Park;Hiromasa Nishikiori;Nobuaki Tanaka;Y. Kim;T. Fujii;M. Endo;M. S. Dresselhaus
我们研究了氧化钛光催化对 N-甲基-2-吡咯烷酮单独分散的单壁碳纳米管 (SWNT) 悬浮液的时间依赖性影响。通过光学光谱研究，我们发现了半导体管的选择性装饰。这种选择性归因于光生活性物质对空穴掺杂半导体单壁碳纳米管的优先攻击。
We have examined the time-dependent effect of the titanium oxide photocatalysis on N-methyl-2-pyrrolidone individually dispersed single walled carbon nanotube (SWNT) suspensions. From optical spectroscopic studies, we found a selective decoration of the semiconducting tubes. Such selectivity is attributed to the preferential attack of the photogenerated active species on the hole-doped semiconducting SWNTs.