Preparation of Er(Co,Cu)5 Alloy Thin Films on Cr(211) Underlayer
Preparation of Er(Co,Cu)5 Alloy Thin Films on Cr(211) Underlayer
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Cr(211)底层上Er(Co,Cu)5合金薄膜的制备
DOI：
10.1109/tmag.2018.2817618
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发表时间：
2018
影响因子：
2.1
通讯作者：
Nobuyuki Inaba
中科院分区：
文献类型：
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作者：
Mitsuru Ohtake;Kana Serizawa;Masaaki Futamoto;Fumiyoshi Kirino;Nobuyuki Inaba
Er17(CO1-xCux)83(At.采用在MgO(110)衬底上异质外延生长的Cr(211)衬底，在500℃下制备了(%，x=0-1)合金薄膜。晶相的形成受铜/钴成分的影响。X=0时形成非晶膜，x=0.25-1时形成外延膜。在Er-Co膜中添加铜原子促进晶化。X=0.2 5~0.5的薄膜由Er(Co，Cu)5(11̅0 0)和Er(Co，Cu)5(0 0 0 1)晶体组成。晶体取向关系为Er(Co，Cu)5(11̅00)[1̅1̅20]||Cr(2 11)[11̅1̅]，(2 11)[11̅1̅]和Er(Co，Cu)5(0001)[1̅1̅20]||Cr(211)[1̅11]，(2 11)[11̅1̅]。然而，随着x值的进一步增加，晶相转变为与Er(Co，Cu)5不同的相。控制铜原子的数量是稳定Er(Co，Cu)5相的重要因素。
Er17(Co1-xCux)83(at. %, x = 0 - 1) alloy thin films are prepared at 500 °C by employing Cr(211) underlayers heteroepitaxially grown on MgO(110) substrates. Crystallographic phase formation is influenced by the Cu/Co composition. Amorphous film is formed for x = 0, whereas epitaxial films are obtained for x = 0.25 - 1. Cu atom addition into Er-Co film promotes crystallization. The films with x = 0.25 - 0.5 consist of a mixture of Er(Co,Cu)5(11̅00) and Er(Co,Cu)5(0001) crystals. The crystallographic orientation relationships are Er(Co,Cu)5(11̅00)[1̅1̅20] || Cr(211)[11̅1̅], (211)[11̅1̅] and Er(Co,Cu)5(0001)[1̅1̅20] || Cr(211)[1̅11], (211)[11̅1̅]. However, with further increasing x value, the crystallographic phase changes to a phase different from Er(Co,Cu)5. Control of the amount of Cu atom is important to stabilize the Er(Co,Cu)5phase.