Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering
Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering
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DOI：
10.1109/ted.2008.2004647
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发表时间：
2008-11
影响因子：
3.1
通讯作者：
C. Alexander;G. Roy;A. Asenov
中科院分区：
文献类型：
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作者：
C. Alexander;G. Roy;A. Asenov
针对代表 90、65、45、35 和 22 nm 技术节点的一系列规模良好的 n 沟道 MOSFET，对随机掺杂剂引起的漏极电流变化进行了全面的仿真研究。使用 3-D 漂移扩散 (DD) 和 3-D 蒙特卡罗 (MC) 在低和高漏极偏置下进行仿真。系综 MC 模拟器结合了电离杂质通过随机离散杂质的库仑势中载流子的实空间轨迹散射的“从头开始”处理。与 DD 模拟相比，MC 模拟显示漏极电流变异性显着增加，这是由于 DD 迁移率模型中未捕获的位置相关库仑散射导致额外的传输变化造成的。这种传输变化是在 DD 方法中单独捕获的载流子密度静电变化之外的变化。通过比较 DD 和 MC 结果，我们估计了不同漏极偏置条件下静电和传输引起的变异性的相对重要性。
A comprehensive simulation study of random-dopant-induced drain current variability is presented for a series of well-scaled n-channel MOSFETs representative of the 90-, 65-, 45-, 35-, and 22-nm technology nodes. Simulations are performed at low and high drain biases using both 3-D drift diffusion (DD) and 3-D Monte Carlo (MC). The ensemble MC simulator incorporates an ldquo ab initiordquo treatment of ionized impurity scattering through the real-space trajectories of the carriers in the Coulomb potential of the random discrete impurities. When compared with DD simulations, the MC simulations reveal a significant increase in the drain current variability as a result of additional transport variations due to position-dependent Coulomb scattering that is not captured within the DD mobility model. Such transport variations are in addition to the electrostatic variation in carrier density that is alone captured within the DD approach. Through comparison of the DD and MC results, we estimate the relative importance of electrostatic and transport-induced variability at different drain bias conditions.