Investigation of millisecond-long analog single-event transients in the LM6144 op amp
Investigation of millisecond-long analog single-event transients in the LM6144 op amp
复制标题
研究 LM6144 运算放大器中的毫秒长模拟单事件瞬态
DOI：
10.1109/tns.2004.839196
复制
发表时间：
2004
影响因子：
1.8
通讯作者：
M. Maher
中科院分区：
文献类型：
--
作者：
Y. Boulghassoul;S. Buchner;D. McMorrow;V. Pouget;L. Massengill;P. Fouillat;W. Holman;C. Poivey;J. Howard;M. Savage;M. Maher
在LM6144运算放大器中实验观察到一种新的毫秒级持续时间的模拟单事件瞬态（set）。这是首次在线性集成电路中研究具有如此极端宽度的事件。依靠重离子宽带测试、皮秒脉冲激光诊断和计算机辅助电路建模，我们揭示了这些异常电压瞬变的机制和原因。对IC问题区域的识别表明，偏置/启动电路对高能电离粒子敏感，并且在遭受重离子撞击时可能导致损坏的电路操作。提出了一种对运放布局和电气性能影响最小的电路硬化解决方案来减轻这种影响。
A new category of analog single-event transients (SETs) with millisecond-long durations have been experimentally observed in the LM6144 operational amplifier. It is the first time that events with such extreme widths are under investigation in a linear integrated circuit. Relying on heavy-ion broadbeam tests, picosecond pulsed lasers diagnostics, and computer-assisted circuit modeling, we uncover the mechanisms and causes of these anomalous voltage transients. The identification of the problematic area of the IC reveals that the bias/startup circuitry is sensitive to energetic ionizing particles and can be responsible for corrupted circuit operations when subjected to a heavy-ion strike. A circuit hardening solution with minimal impact on the layout and the electrical performances of the op amp are proposed to mitigate this effect.