Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier
Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier
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DOI：
10.1063/1.3130211
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发表时间：
2009-05-04
影响因子：
4
通讯作者：
Miyao, M.
中科院分区：
文献类型：
--
作者：
Ando, Y.;Hamaya, K.;Miyao, M.
我们演示了电注入和检测自旋极化电子在硅（Si）使用外延生长的Fe 3Si/Si肖特基隧道势垒接触。通过在铁磁Fe_3Si接触和Si沟道（10（15）cm ~（-3））之间的界面附近插入δ掺杂n（+）-Si层（10（19）cm ~（-3）），我们实现了Fe_3Si/Si肖特基二极管反向偏置特性的隧道电导的显著增强。使用横向制造的四探针几何形状与修改后的Fe 3Si/Si接触，我们检测非本地输出信号，起源于自旋积累在Si沟道在低温下。
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n(+)-Si layer (similar to 10(19) cm(-3)) near the interface between a ferromagnetic Fe3Si contact and a Si channel (similar to 10(15) cm(-3)), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.