A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current–Voltage and Capacitance–Voltage Characteristics Prediction

A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current–Voltage and Capacitance–Voltage Characteristics Prediction
复制标题

DOI:
--
复制
发表时间:
--
期刊:
J. Comput. Theor. Nanosci.
影响因子:
--
通讯作者:
--
中科院分区:
--
文献类型:
--
作者:
Min Shi;Hao Zhuang;Jin He;Lining Zhang;Jian Zhang;Zhiwei Liu;Wen Wu;Wenping Wang;Yong Ma;Xukai Zhang;

文献摘要

相似文献