Light emitting diodes based on GaPN/Si for optoelectronic integrated circuits
Light emitting diodes based on GaPN/Si for optoelectronic integrated circuits
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用于光电集成电路的GaPN/Si基发光二极管
DOI：
10.1117/12.735932
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
A. Wakahara
中科院分区：
文献类型：
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作者：
Y. Furukawa;H. Yonezu;A. Wakahara
为了实现光电子集成电路(OEIC)，我们尝试将发光器件单片集成到硅大规模集成电路中。OEIC可以实现并行信息处理、光互连等应用。采用迁移增强外延和分子束外延技术在Si(100)衬底上生长了无结构缺陷的GaPN和InGaPN层。我们还成功地生长出了一种无位错的Si/GaPn/Si结构，这是OEIC的基本结构。此外，S(或Te)和镁掺杂分别实现了GaPn中电子浓度和空穴浓度的控制。随后，在硅衬底上实现了晶格匹配的InGaPN/GaPN双异质结发光二极管(LED)。在此基础上，开发了光电集成器件的制作工艺流程，并将其应用于a-Si/InGaPN/GaPN双异质结LED/Si层中。因此，首次将LED和金属氧化物半导体场效应晶体管单片集成到单个芯片中。随着发光效率的提高和基于GaPN的微尺寸LED的开发，将实现新型的光电集成器件。
We have tried to monolithically merge light emitting devices into Si large-scale integrated circuits in a single chip for realization of optoelectronic integrated circuits (OEICs). OEICs could be realized for parallel information processing, optical interconnection and other applications. Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate by using migration enhanced epitaxy and molecular beam epitaxy. A dislocation-free Si/GaPN/Si structure, which is a basic structure for OEICs, was successfully grown as well. In addition, control of electron and hole concentrations in GaPN was achieved by S(or Te)- and Mg-doping, respectively. Subsequently, a lattice-matched InGaPN/GaPN double-heterostructure (DH) light emitting diode (LED) was realized on a Si substrate. Moreover, fabrication process flow for OEIC was developed and applied to a Si/InGaPN/GaPN DH LED/Si layers. As a result, LEDs and metal-oxide-semiconductor field effect transistors were monolithically integrated in a single chip for the first time. When the luminescence efficiency is improved and micro-size LEDs based on GaPN are developed, novel OEICs would be realized.