Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics
Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics
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DOI：
10.1016/j.orgel.2016.10.034
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发表时间：
2017
影响因子：
3.2
通讯作者：
H. Jinno;T. Yokota;N. Matsuhisa;M. Kaltenbrunner;Y. Tachibana;T. Someya
中科院分区：
文献类型：
--
作者：
H. Jinno;T. Yokota;N. Matsuhisa;M. Kaltenbrunner;Y. Tachibana;T. Someya
我们制作了有机薄膜晶体管（OTFT）与子1 V的驱动电压，使混合电介质，包括高k非晶氧化钛（TiOx）和膦酸自组装单层（SAM）。p型OTFT显示出高开/关比（105）、接近0 V的阈值电压（-0.09 V）以及在1 V下工作时1.2 cm 2/Vs的高迁移率。这些OTFT很容易在电路应用中，我们显示伪CMOS和CMOS反相器工作在0.5 V的低电压先进的有机逻辑电路的基本构建块。我们制作了一个五级CMOS环形振荡器，在0.5 V的驱动电压下显示出清晰的振荡特性，以突出我们的混合电介质的超低压集成塑料电路的潜力。
We fabricated organic thin-film transistors (OTFTs) with sub-1 V driving voltage enabled by a hybrid dielectric comprising high-k amorphous titanium oxide (TiOx) and a phosphonic acid self-assembled monolayer (SAM). The p-type OTFTs show a high on/off ratio (105), a near 0 V threshold voltage (−0.09 V), and a high mobility of 1.2 cm2/Vs when operated at 1 V. These OTFTs are readily employed in circuit applications, and we show pseudo-CMOS and CMOS inverters operating at 0.5 V as basic building blocks of low-voltage advanced organic logic circuits. We fabricate a five-stage CMOS ring oscillator that displays clear oscillation characteristics at a driving voltage of 0.5 V to highlight the potential of our hybrid dielectric for ultra-low-voltage integrated plastic circuitry.