Accurate Location and Manipulation of Nanoscaled Objects Buried under Spin-Coated Films
Accurate Location and Manipulation of Nanoscaled Objects Buried under Spin-Coated Films
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DOI：
10.1021/acsnano.5b01485
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发表时间：
2015-06-01
期刊：
影响因子：
17.1
通讯作者：
Knoll, Armin W.
中科院分区：
文献类型：
--
作者：
Rawlings, Colin;Wolf, Heiko;Knoll, Armin W.
检测和精确定位埋在自旋涂层薄膜下的纳米级结构是纳米制造技术的重要补充。原则上，最终薄膜的地形包含了埋藏地物位置的信息。然而，人们普遍认为，这种关系被流动效应所掩盖，流动效应导致干膜的地形向上游移动，使精确定位变得不可能。在这里，我们从理论上和实验上证明，流移范式不适用于亚微米尺度。具体地说，我们证明了通过对称高斯核的卷积运算可以精确地获得电阻的形貌，其参数仅取决于电阻的特性。我们利用这一发现，利用热扫描探针光刻技术将金属触点精确地覆盖在直径为27纳米的InAs纳米线上。
Detection and precise localization of nanoscale structures buried beneath spin-coated films are highly valuable additions to nanofabrication technology. In principle, the topography of the final film contains information about the location of the buried features. However, it is generally believed that the relation is masked by flow effects, which lead to an upstream shift of the dry film's topography and render precise localization impossible. Here we demonstrate, theoretically and experimentally, that the flow-shift paradigm does not apply at the submicrometer scale. Specifically, we show that the resist topography is accurately obtained from a convolution operation with a symmetric Gaussian kernel whose parameters solely depend on the resist characteristics. We exploit this finding for a 3 nm precise overlay fabrication of metal contacts to an InAs nanowire with a diameter of 27 nm using thermal scanning probe lithography.