Fabrication and performance of parallel-addressed InGaN micro-LED arrays
Fabrication and performance of parallel-addressed InGaN micro-LED arrays
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DOI：
10.1109/lpt.2003.809257
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发表时间：
2003-04-01
影响因子：
2.6
通讯作者：
Martin, RW
中科院分区：
文献类型：
--
作者：
Choi, HW;Jeon, CW;Martin, RW
高性能二维并行寻址 InGaN 蓝色微发光二极管 (LED) 阵列已经制造出来，其单个元件直径分别为 8、12 和 20 μm，总体尺寸为 490 x 490 μm。为了克服互连多个器件元件且具有足够的阶梯高度覆盖以进行接触金属化的困难，出现了一种涉及倾斜侧壁蚀刻的新颖方案。已开发。这些器件的电流-电压 (I-V) 特性接近于由同一晶圆制造的大面积参考 LED，并且在正向方向上提供与参考 LED 相当的 (3 mW) 光输出，尽管有效面积要低得多。 Micro-LED 阵列的外部效率随着各个元件尺寸的缩小而提高。这是由于面内传播光子向前方向的蚀刻侧壁处的散射造成的。
High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 mum, respectively, and overall dimensions 490 x 490 mum, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-side-walls has. been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering, at the etched sidewalls of in-plane propagating photons into the forward direction.