Perpendicular spin-torque switching with a synthetic antiferromagnetic reference layer
Perpendicular spin-torque switching with a synthetic antiferromagnetic reference layer
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DOI：
10.1063/1.3441402
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发表时间：
2010-05-24
影响因子：
4
通讯作者：
Fullerton, Eric E.
中科院分区：
文献类型：
--
作者：
Tudosa, Ioan;Katine, J. A.;Fullerton, Eric E.
研究了具有合成反铁磁参考层的垂直各向异性纳米柱自旋阀器件的自旋转矩开关。复合参考层的使用减少了与自由层的偶极相互作用，产生两个剩余态。我们推导了一个完整的电流场相图，包括自由层的小回路，我们确定了平行和反平行构型下参考层的相对偶极场和有效自旋极化。我们发现参考层的磁响应对自旋极化电流相对不敏感，这可能有利于自旋扭矩的应用。(C) 2010年美国物理研究所。(doi: 10.1063/1.3441402)
Spin-torque switching of perpendicular anisotropy nanopillar spin valve devices with synthetic antiferromagnetic reference layers is presented. The use of composite reference layer reduces the dipolar interaction with the free layer yielding two remanent states. We derive a complete current-field phase diagram including minor loops of the free layer where we determine the relative dipolar fields and effective spin polarization of the reference layer in both the parallel and antiparallel configurations. We find the magnetic response of the reference layer relatively insensitive to the spin polarized current which may prove advantageous for spin-torque applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3441402]