Production of high-quality ZnO films by the two-step annealing method
Production of high-quality ZnO films by the two-step annealing method
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DOI：
10.1063/1.1791755
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发表时间：
2004-10
影响因子：
3.2
通讯作者：
Jiandong Ye;S. Gu;S. M. Zhu;F. Qin;S. Liu;W. Liu;X. Zhou;L. Hu;R. Zhang;Yue-chun Shi;Youliao Zheng
中科院分区：
文献类型：
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作者：
Jiandong Ye;S. Gu;S. M. Zhu;F. Qin;S. Liu;W. Liu;X. Zhou;L. Hu;R. Zhang;Yue-chun Shi;Youliao Zheng
在这项研究中，一个两步退火方法是先进的生产高品质的ZnO薄膜具有优异的结构，电气和光学性能。氧退火和氮退火对未掺杂ZnO薄膜性质的影响是可逆的，它们分别归因于氧的化学吸附和脱附导致的反位氧OZn和氧空位VO的非本征陷阱态的产生和湮灭。此外，在氮气中退火导致轻微的氮掺入，随后增加电阻率并在膜中引起压应力。这种两步法的关键是保持氧的化学吸附和解吸平衡。由于退火环境与生长条件的相似性，该工艺可以移植并用于原位制备高质量的ZnO外延层。
In this study, a two-step annealing method is advanced to produce high-quality ZnO films with excellent structural, electrical, and optical properties. The effects of oxygen and nitrogen annealing on the properties of undoped ZnO films are reversible to each other and are attributed to the creation and annihilation of extrinsic trap states of antisite oxygen OZn and oxygen vacancies VO, which result from the chemisorption and desorption of oxygen, respectively. Moreover, annealing in nitrogen causes slight nitrogen incorporation, subsequently increasing the resistivity and inducing compressive stress in the film. The key to this two-step method is to keep the chemisorption and desorption of oxygen in equilibrium. Due to the similarity of annealing ambient with the growth condition, this process can be transplanted and employed in the in situ preparation of high-quality ZnO epilayers.