MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications
MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications
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DOI：
10.1109/led.2009.2026659
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发表时间：
2009-08
影响因子：
4.9
通讯作者：
R. Chu;Zhen Chen;Y. Pei;S. Newman;S. Denbaars;U. Mishra
中科院分区：
文献类型：
--
作者：
R. Chu;Zhen Chen;Y. Pei;S. Newman;S. Denbaars;U. Mishra
We report the performance of AlGaN buffer GaN high-electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition. GaN HEMTs on high-quality AlGaN buffer were grown on SiC substrates. The incorporation of an AlGaN buffer into the GaN HEMT significantly improves channel confinement and suppresses the short-channel effect. Advanced deep-recess V-gate structures were employed to optimize the device for better microwave power performance. With a 10- nm GaN channel layer sandwiched between the AlGaN barrier and buffer, excellent power performance was achieved. The output power density is 13.1 W/mm, and the associated power-added efficiency is 72% at 4-GHz frequency and 48- V drain bias. This power performance is comparable to the state-of-the-art GaN HEMTs grown on GaN buffers, indicating that the AlGaN buffer in our optimized device structure does not introduce any noticeable trapping.
