Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field.
Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field.
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DOI:
10.1038/ncomms14567
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发表时间:
2017-02-23
影响因子:
16.6
通讯作者:
Paltiel Y
中科院分区:
文献类型:
--
作者:
Ben Dor O;Yochelis S;Radko A;Vankayala K;Capua E;Capua A;Yang SH;Baczewski LT;Parkin SS;Naaman R;Paltiel Y
Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory. However, the current density required for the spin-transfer torque is of the order of 1 × 106 A·cm−2, or about 1 × 1025 electrons s−1 cm−2. This relatively high current density significantly affects the devices' structure and performance. Here we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adsorption of chiral molecules. In this case, about 1013 electrons per cm2 are sufficient to induce magnetization reversal. The direction of the magnetization depends on the handedness of the adsorbed chiral molecules. Local magnetization switching is achieved by adsorbing a chiral self-assembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotropy. These results present a simple low-power magnetization mechanism when operating at ambient conditions. Spin manipulation in memory devices typically requires large electrical currents, limiting performance. Here the authors demonstrate magnetization switching in ferromagnetic films by depositing chiral molecules, making use of a proximity effect without needing magnetic or electric fields.