X-ray-induced persistent photoconductivity in vanadium dioxide
X-ray-induced persistent photoconductivity in vanadium dioxide
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DOI：
10.1103/physrevb.90.165109
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发表时间：
2014-10-08
影响因子：
3.7
通讯作者：
Shpyrko, O. G.
中科院分区：
文献类型：
--
作者：
Dietze, S. H.;Marsh, M. J.;Shpyrko, O. G.
二氧化钒（VO2）的电阻率下降超过一个数量级的局部照射后，在室温下与X射线。尽管这种减少，结构保持在单斜相，并没有高温四相的签名，通常与较低的电阻。一旦照明停止，松弛到绝缘状态需要几十个小时接近室温。然而，通过热循环，在几分钟内实现了绝缘状态的完全恢复。我们发现，这种行为是一致的随机本地电位波动和随机分布的离散复合网站用于模拟剩余光电导。
The resistivity of vanadium dioxide (VO2) decreased by over one order of magnitude upon localized illumination with x rays at room temperature. Despite this reduction, the structure remained in the monoclinic phase and had no signature of the high-temperature tetragonal phase that is usually associated with the lower resistance. Once illumination ceased, relaxation to the insulating state took tens of hours near room temperature. However, a full recovery of the insulating state was achieved within minutes by thermal cycling. We show that this behavior is consistent with random local-potential fluctuations and random distribution of discrete recombination sites used to model residual photoconductivity.