Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles
Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles
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DOI：
10.1063/1.2425010
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发表时间：
2006-12
影响因子：
4
通讯作者：
R. Ravindran;K. Gangopadhyay;S. Gangopadhyay;N. Mehta;N. Biswas
中科院分区：
文献类型：
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作者：
R. Ravindran;K. Gangopadhyay;S. Gangopadhyay;N. Mehta;N. Biswas
嵌入银纳米粒子 (Ag-nps) 的薄氧化铝层的多层反应电子束蒸发已被用来创建具有增强介电常数的介电薄膜。结果显示介电常数 κ 随频率增加。控制样本的总堆栈 κ 在 1kHz–1MHz 范围内为 7.7–7.4。这是与 Ag-nps 样品中相同频率范围内的 κ=16.7–13.0 进行比较的。电容电压和电导电压测量表明存在由 Ag-nps 产生的电荷捕获。作者将这种介电常数的增强归因于偶极子和空间电荷极化机制。
Multilayer reactive electron-beam evaporation of thin aluminum oxide layers with embedded silver nanoparticles (Ag-nps) has been used to create a dielectric thin film with an enhanced permittivity. The results show a frequency dependent increase of the dielectric constant κ. Overall stack κ of the control sample was found to be 7.7–7.4 in the 1kHz–1MHz range. This is in comparison with κ=16.7–13.0 over the same frequency range in the sample with Ag-nps. Capacitance-voltage and conductance-voltage measurements indicate the presence of charge capture resulting from the Ag-nps. The authors attribute this dielectric constant enhancement to dipole and space charge polarization mechanisms.