Design analysis of a novel hot-electron microbolometer
Design analysis of a novel hot-electron microbolometer
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新型热电子微测辐射热计的设计分析
DOI：
10.1109/77.233921
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发表时间：
1993
影响因子：
1.8
通讯作者：
C. Mears
中科院分区：
文献类型：
--
作者：
M. Nahum;P. Richards;C. Mears
本文提出了一种利用金属中电子和声子在低温下弱耦合的天线耦合微辐射热计。辐射由平面光刻天线收集，并在薄金属带中热化。由此产生的电子温升由隧道结检测，其中部分金属带形成正常电极。辐射热计的有效区域是由其小体积、带内电子和声子之间的热阻以及带与超导天线界面处准粒子的反射热耦合而成的。在100 mK的工作温度下，基于2 μ m*6 μ m*0.05 μ m的金属体积进行设计计算，NEP约为3*10/sup -19/ WHz/sup -1/2/，时间常数约为10 μ s，响应率约为10/sup 9/ V/W。计算出的灵敏度几乎比在相同温度下工作的最佳毫米和亚毫米辐射直接探测器高出两个数量级
The authors propose a novel antenna coupled microbolometer which makes use of the weak coupling between electrons and phonons in a metal at low temperatures. The radiation is collected by a planar lithographed antenna and thermalized in a thin metal strip. The resulting temperature rise of the electrons is detected by a tunnel junction, where part of the metal strip forms the normal electrode. The active area of the bolometer is thermally coupled by its small volume, by the thermal resistance between the electrons and phonons in the strip, and by the reflection of quasi-particles at the interface between the strip and the superconducting antenna. Design calculations based on a metal volume of 2 mu m*6 mu m*0.05 mu m at an operating temperature of 100 mK give an NEP of about 3*10/sup -19/ WHz/sup -1/2/, a time constant of about 10 mu s, and a responsivity of about 10/sup 9/ V/W. The calculated sensitivity is almost two orders of magnitude higher than that of the best available direct detectors of millimeter and submillimeter radiation operated at the same temperature.<<ETX>>