Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm
Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm
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DOI：
10.1002/lpor.201700206
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发表时间：
2018-02
影响因子：
11
通讯作者：
S. Kumari;E. Haglund;J. Gustavsson;A. Larsson;G. Roelkens;R. Baets
中科院分区：
文献类型：
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作者：
S. Kumari;E. Haglund;J. Gustavsson;A. Larsson;G. Roelkens;R. Baets
实验研究了一种在氮化硅(SiN)波导中实现面内发射的短波长混合垂直腔硅集成激光器(VCSIL)。垂直腔体与面内SIN波导的耦合是通过放置在垂直腔体内的SIN波导上的弱光栅来实现的。该光栅提供耦合，设置激光输出的偏振，并提供横模控制。一个阈值电流为1.1 mA、直径为5µm、偏置电流为2.6 mA、波长为856 nm、边模抑制比(SMSR)为29d B的单边波导耦合光输出功率为73µW。
A continuous‐wave electrically‐pumped short‐wavelength hybrid vertical‐cavity silicon‐integrated laser (VCSIL) with in‐plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in‐plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 µm oxide‐aperture diameter device with a threshold current of 1.1 mA produces 73 µW single‐sided waveguide‐coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side‐mode suppression ratio (SMSR) of 29 dB.