Logic Synthesis for In-memory Computing Using Resistive Memories
Logic Synthesis for In-memory Computing Using Resistive Memories
复制标题
使用电阻存储器进行内存计算的逻辑综合
DOI：
10.1109/isvlsi.2018.00075
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
R. Drechsler
中科院分区：
文献类型：
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作者：
S. Shirinzadeh;R. Drechsler
人们越来越渴望绕过当前计算机架构中的内存瓶颈问题，这引起了人们对电阻式随机存取存储器 (RRAM) 等新兴内存技术支持的内存计算的高度关注。本文从定制化和基于指令两个角度研究内存计算。定制方法利用逻辑表示来综合内存计算。该方法提出了每种表示的设计方法和优化算法，涉及逻辑原语实现的面积和延迟。基于指令的方法提出了一种自动编译器来在内存逻辑计算机架构上执行指令并优化程序。两种方法的实验结果表明，与最先进的技术相比，都有相当大的改进。
The increasing urge to bypass the issue of the memory bottleneck in the current computer architectures has attracted high attention to in-memory computing enabled by emerging memory technologies such as Resistive Random Access Memory (RRAM). This paper studies in-memory computing from two perspectives, i.e. customized and instruction-based. The customized approach exploits logic representations to synthesize for in-memory computing. The approach proposes design methodologies and optimization algorithms for each representation with respect to area and latency upon the realizations of their logic primitives. The instruction-based approach proposes an automatic compiler to execute instructions on a logic-in-memory computer architecture and optimizes the programs. Experimental results for both approaches reveal considerable improvements compared to the state-of-the-art.