Enhanced hole and interface trap generation in plasma damaged bulk and SOI MOSFETs under total dose irradiation
Enhanced hole and interface trap generation in plasma damaged bulk and SOI MOSFETs under total dose irradiation
复制标题
DOI：
10.1109/ppid.1998.725565
复制
发表时间：
1998-06
期刊：
影响因子：
--
通讯作者：
J. Yue;S. Sinha
中科院分区：
文献类型：
--
作者：
J. Yue;S. Sinha
对体片和SOI晶片上的等离子体损伤NMOS器件进行了X射线总剂量辐照。在总剂量辐照前，对照器件和等离子体损伤器件之间的阈值电压和亚阈值斜率的差异很小。然而，在1mrad(SiO/sub2/)的总剂量辐照后，等离子体损伤的器件具有明显更高的氧化物陷阱电荷和界面陷阱电荷密度。这一结果不同于传统的热载流子应力或等离子体损伤器件的Fowler-Nordheim(F-N)应力，在F-N应力下，增强的空穴陷阱不那么明显。
Plasma damaged NMOS devices, fabricated on bulk and SOI wafers, were subjected to X-ray total dose irradiation. Prior to total dose irradiation, the differences in threshold voltage and subthreshold slope between the control and plasma damaged devices were very small. However, after total dose irradiation to 1 Mrad (SiO/sub 2/), it became obvious that the plasma damaged devices have a significantly higher density of both oxide-trap charge and interface-trap charge. This result is different from the traditional hot-carrier or Fowler-Nordheim (F-N) stress of plasma damaged devices, where enhanced hole trapping is less pronounced.