In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN
In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN
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InGaN 金属有机化学气相沉积过程中应变和成分演化的原位同步加速器 X 射线研究
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发表时间：
2010
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通讯作者：
G. Stephenson
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作者：
M. Richard;M. Highland;T. Fister;A. Munkholm;J. Mei;S. Streiffer;C. Thompson;P. Fuoss;G. Stephenson
InGaN的成分和应变不均匀性对其光电性能有很大影响，但其来源尚不清楚。本文报道了实时x射线互易空间图，揭示了金属-有机化学气相沉积InxGa1-−xN过程中应变和成分分布的发展。在生长过程中，应变状态和分数x的强烈、相关的不均匀以一种与应变松弛驱动的不稳定性模型一致的方式出现。
Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1−xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.