Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
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单原子控制砷在硅中的掺入用于高产人工晶格制造
DOI：
10.1002/adma.202312282
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发表时间：
2024
影响因子：
29.4
通讯作者：
Stock T
中科院分区：
文献类型：
--
作者：
Stock T
由半导体晶体内的单个掺杂剂原子构造的人工晶格有望提供具有定制的电子、磁性和光学性质的新型材料。这些定制的晶格有望在凝聚态物理学中实现新的基础发现，并导致新的半导体技术的创造，包括模拟量子模拟器和通用固态量子计算机。这项工作报告精确和可重复的，取代纳入单一砷原子到硅晶格。结合扫描隧道显微镜氢抗蚀剂光刻和氢封端硅（001）表面上的砷化氢化学的详细统计探索，表明单个砷掺杂剂可以确定性地放置在四个硅晶格位置内，并以97 ± 2%的产率掺入。这些发现使我们更接近半导体技术的最终前沿：在任意大尺度上原子级精确掺杂剂和量子位阵列的确定性组装。
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom‐engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid‐state quantum computers. This work reports precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. A combination of scanning tunneling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen‐terminated silicon (001) surface are employed to show that single arsenic dopants can be deterministically placed within four silicon lattice sites and incorporated with 97 ± 2% yield. These findings bring closer to the ultimate frontier in semiconductor technology: the deterministic assembly of atomically precise dopant and qubit arrays at arbitrarily large scales.