Electronic band structure of high‐index silicon nanowires
Electronic band structure of high‐index silicon nanowires
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DOI：
10.1002/pssb.200541133
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发表时间：
2005-10
期刊：
影响因子：
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通讯作者：
H. Scheel;S. Reich;C. Thomsen
中科院分区：
文献类型：
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作者：
H. Scheel;S. Reich;C. Thomsen
我们计算了高折射率独立硅纳米线的电子性质。[11$ \bar 2 $]纳米线是间接半导体，直径可达0. 8 nm; [110]线在Γ点有直接带隙，但在导带边缘的态密度非常小。限制参数表明，只有[001]纳米线预计将开发一个直接的间隙与大密度的电子态在带边的直径在nm范围内。差距的大小强烈地依赖于线生长方向，这是由于对于Γ X-衍生的硅态的不同的有效限制长度和有效质量。校正的波函数的扩展，我们发现我们的计算能量同意最近的扫描隧道实验。（© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We calculated the electronic properties of high‐index free‐standing silicon nanowires. [11$ \bar 2 $] nanowires are indirect semiconductors for diameters down to 0.8 nm; [110] wires have a direct band gap at the Γ‐point, but the density of states is very small at the conduction band edge. Confinement arguments show that only [001] nanowires are expected to develop a direct gap with a large density of electronic states at the band edges for diameters in the nm range. The magnitude of the gap depends strongly on the wire growth direction, which is due to the different effective confinement length and effective masses for the Γ X‐derived silicon states. Correcting for the extension of the wave functions we find our calculated energies to agree with recent scanning tunneling experiments. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)