Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain
Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain
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DOI：
10.1063/1.2768918
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发表时间：
2007-08
影响因子：
4
通讯作者：
X. He;B. Shen;Y. Tang;N. Tang;C. Yin;F. Xu;Z. Yang;G. Zhang;Yonghai Chen;C. Tang;Z. Wang
中科院分区：
文献类型：
--
作者：
X. He;B. Shen;Y. Tang;N. Tang;C. Yin;F. Xu;Z. Yang;G. Zhang;Yonghai Chen;C. Tang;Z. Wang
在单轴应变下研究了红外辐射诱导Al 0.25Ga 0.75N/GaN异质结构中二维电子气的循环光电流效应。所观测到的光电流由CPGE电流和线性光电流效应电流的叠加组成，两者都高达10（-2）nA。电流幅值随应变的增加而线性增加，当应变为2.2 × 10 ~（-3）时，电流幅值增加了18.6%。基于实验结果，分离了2DEG的体反转不对称（BIA）和结构反转不对称（SIA）自旋分裂对异质结中CPGE电流的贡献，并估计SIA项与BIA项之比约为13.2，表明SIA是导致AlxGa_（1-xN）/Al_xGa_（1-xN）三角形量子阱中子带k-线性自旋分裂的主要机制。GaN异质界面(C)2007年，美国物理学会。
The circular photogalvanic effect (CPGE) of the two-dimensional electron gas (2DEG) in Al0.25Ga0.75N/GaN heterostructures induced by infrared radiation has been investigated under uniaxial strain. The observed photocurrent consists of the superposition of the CPGE and the linear photogalvanic effect currents, both of which are up to 10(-2) nA. The amplitude of the CPGE current increases linearly with additional strain and is enhanced by 18.6% with a strain of 2.2x10(-3). Based on the experimental results, the contribution of bulk-inversion asymmetry (BIA) and structure-inversion asymmetry (SIA) spin splitting of the 2DEG to the CPGE current in the heterostructures is separated, and the ratio of SIA and BIA terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces. (C) 2007 American Institute of Physics.